Epitaxial rhombohedral boron nitride (r-BN) films were deposited on ZrB₂(0001)/4H-SiC(0001) by chemical vapor deposition at 1485 °C from the reaction of triethylboron and ammonia and with a minute amount of silane (SiH₄). X-ray diffraction (XRD) φ-scans yield the epitaxial relationships of $\mathrm{r}\text{-}\mathrm{BN}(0001)\parallel \mathrm{Zr}{\mathrm{B}}_2(0001)$out-of-plane and $\mathrm{r}\text{-}\mathrm{BN}[11\overline{2}0]\parallel \mathrm{Zr}{\mathrm{B}}_2[11\overline{2}0]$ in-plane. Cross-sectional transmission electron microscopy (TEM) micrographs showed that epitaxial growth of r-BN films prevails to ∼10 nm. Both XRD and TEM demonstrate the formation of carbon- and nitrogen-containing cubic inclusions at the ZrB₂ surface. Quantitative analysis from x-ray photoelectron spectroscopy of the r-BN films shows B/N ratios between 1.30 and 1.20 and an O content of 3–4 at. %. Plan-view scanning electron microscopy images reveal a surface morphology where an amorphous material comprising B, C, and N is surrounding the epitaxial twinned r-BN crystals.

中文翻译：

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ZrB2上的菱形氮化硼外延

通过三乙基硼和氨与微量硅烷（SiH _4）的反应在1485°C下通过化学气相沉积法在ZrB ₂（0001）/ 4H-SiC（0001）上沉积外延菱形氮化硼（r-BN）膜）。X射线衍射（XRD）φ扫描得出$\mathrm{[R}\text{--}\mathrm{国阵}（0001）\parallel \mathrm{锆}{\mathrm{乙}}_2（0001）$平面外和 $\mathrm{[R}\text{--}\mathrm{国阵}[11\overline{2}0]\parallel \mathrm{锆}{\mathrm{乙}}_2[11\overline{2}0]$平面内。横截面透射电子显微镜（TEM）显微照片显示，r-BN薄膜的外延生长占主导地位，约为10 nm。XRD和TEM均表明在ZrB ₂表面形成了含碳和含氮的立方夹杂物。r-BN薄膜的X射线光电子能谱定量分析显示B / N比在1.30和1.20之间，O含量为3-4 at。％。平面扫描电子显微镜图像揭示了一种表面形态，其中包含B，C和N的非晶质材料围绕着外延孪生r-BN晶体。