Recent breakthroughs in bulk crystal growth of the thermodynamically stable beta phase of gallium oxide (β-Ga₂O₃) have led to the commercialization of large-area β-Ga₂O₃ substrates with subsequent epitaxy on (010) substrates producing high-quality films. Still, metalorganic chemical vapor deposition, molecular beam epitaxy, and processing of the (010) β-Ga₂O₃ surface are known to form subnanometer-scale facets along the [001] direction as well as larger ridges with features perpendicular to the [001] direction. A density function theory calculation of the (010) surface shows an ordering of the surface as a subnanometer-scale feature along the [001] direction. Additionally, the general crystal structure of β-Ga₂O₃ is presented, and recommendations are presented for standardizing (010) substrates to account for and control the larger-scale ridge formation.

中文翻译：

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评估（010）β-Ga2O3的表面和基材规格

在氧化镓的热力学稳定的β相的块状晶体生长最近的突破（的β-Ga ₂ ö ₃）导致了大面积的商业化的β-Ga _2层ö ₃与随后的外延生长的衬底上（010）产生的衬底的高优质电影。尽管如此，金属有机化学气相沉积，分子束外延，和的（010）的β-Ga处理₂ ö ₃已知表面沿[001]方向形成亚纳米级小平面以及具有垂直于[001]方向的特征的较大脊。（010）表面的密度函数理论计算显示，该表面沿[001]方向的排列顺序为亚纳米级特征。此外，的的β-Ga一般晶体结构₂ ö ₃被呈现，和建议是为了标准化（010）衬底以考虑并控制大规模脊形成。