Femtosecond laser ablation is a flexible method for manufacturing gallium arsenide (GaAs) micro-optical components. However, its machining efficiency and surface quality do not satisfy industry requirements. Wet etching assisted femtosecond laser ablation is proposed to solve these problems. After corrosion, protrusions and particles are selectively corroded. X-ray diffraction and energy dispersive X-ray spectroscopy results show that oxides are formed after laser ablation, and the crystal cell size of GaAs increases. Thus the contact area between hydrofluoric acid atoms and the GaAs crystal cell increases, the ratio of modified-to-unmodified corrosion rate is as high as 10:1. A one-dimensional grating, a conventional Fresnel zone plate (FZP), and a fractal FZP are fabricated using this method. Experiments show that the GaAs micro-optical component can diffract and focus infrared light with a wavelength of 1.5 µm well. The process offers a way to achieve high efficiency and quality manufacturing of GaAs microstructures.

飞秒激光烧蚀是一种用于制造砷化镓（GaAs）微光学组件的灵活方法。但是，其加工效率和表面质量不能满足工业要求。为了解决这些问题，提出了湿法刻蚀辅助的飞秒激光烧蚀。腐蚀后，突起和颗粒被选择性腐蚀。X射线衍射和能量色散X射线光谱分析结果表明，激光烧蚀后形成氧化物，并且GaAs的晶胞尺寸增加。因此，氢氟酸原子与GaAs晶胞之间的接触面积增加，改性与未改性腐蚀速率之比高达10：1。使用此方法可以制作一维光栅，常规的菲涅耳波带片（FZP）和分形FZP。实验表明，GaAs微光学元件可以很好地衍射和聚焦波长为1.5 µm的红外光。该工艺提供了一种实现高效率和高质量GaAs微结构制造的方法。