The injection of holes has an important impact on the performance of InGaN-based green laser diodes (LDs). In this work, we propose a new structure with InGaN hole reservoir layer (HRL) inserted between the last quantum barrier and the upper waveguide to improve the hole injection. It is found that the hole injection current is significantly increased due to the reduction of the hole effective barrier height. Furthermore, lower threshold current and higher output power are obtained, and the optical field leakage is effectively suppressed. Besides, the influences of thickness and In composition of the HRL are also investigated. It is more favorable to improve the properties of LDs when the HRL has a quite low-In content and a thickness of only nearly 11 nm.

空穴的注入对基于InGaN的绿色激光二极管（LD）的性能具有重要影响。在这项工作中，我们提出了一种新结构，在最后一个量子势垒和上波导之间插入InGaN空穴存储层（HRL），以改善空穴注入。发现由于空穴有效势垒高度的减小，空穴注入电流显着增加。此外，获得了较低的阈值电流和较高的输出功率，并且有效地抑制了光场泄漏。此外，还研究了HRL的厚度和In组成的影响。当HRL的In含量非常低且厚度仅接近11 nm时，更有利于改善LD的性能。