Monolayer MoS₂ received great attention as a promising semiconductor material in metal-oxide-semiconductor devices. However, little attention has been given to the capacitance-voltage measurements of monolayer MoS₂ metal-oxide-semiconductor devices. Here, we report the capacitance-voltage measurements of metal-oxide-semiconductor capacitors composed of monolayer MoS₂ and Al₂O₃ gate dielectric. Capacitance-voltage curves of monolayer MoS₂ metal-oxide-semiconductor capacitors exhibit seemingly high-frequency behavior at all measured frequencies with zero minimum capacitance. We described these distinct features by considering the dominant role of quantum capacitance of monolayer MoS₂. Based on the frequency dispersion, we estimated the minimum interface trap density of ~10¹² eV⁻¹ cm⁻², which is comparable with those of multilayer MoS₂ metal-oxide-semiconductor capacitors. These results demonstrate that it is important to understand quantum capacitance for the enhanced performance of metal-oxide-semiconductor devices based on monolayer MoS₂ or other transition metal dichalcogenides.

单层MoS ₂作为金属氧化物半导体器件中的一种有前途的半导体材料受到了广泛的关注。但是，很少关注单层MoS ₂金属氧化物半导体器件的电容电压测量。在这里，我们报告了由单层MoS ₂和Al ₂ O ₃栅极电介质组成的金属氧化物半导体电容器的电容电压测量结果。单层MoS ₂金属氧化物半导体电容器的电容电压曲线在所有测得的频率下均表现出高频特性，且最小电容为零。我们通过考虑单层MoS量子电容的主导作用来描述这些独特的特征₂。基于频率色散，我们估计最小的界面陷阱密度为〜10 ¹²  eV ^-1  cm ^-2，与多层MoS ₂金属氧化物半导体电容器的最小界面陷阱密度相当。这些结果表明，了解量子电容对于提高基于单层MoS ₂或其他过渡金属二卤化金属的金属氧化物半导体器件性能的重要性。