A Gd₂O₃ with its ‘x’ doping rate in the langbeinite matrix and denoted as KMgSGd (x = 0.2, 0.5, 1 mol%) was synthesized at high temperature via the solid state reaction method. Pure phases were successfully obtained in their simple cubic system with the P2₁3 space group. Gd³⁺ can effectively replace Mg²⁺ in the host matrix of langbeinite without any deformation of the structure. KMgSGd (x = 0.5 mol%) was selected as the best ionic conductor because of its low activation energy which has a value of 0.29 eV. Conduction within these materials is done by migration of mobile cations with thermal agitation and it is explained by the CBH (Correlated Barrier Hopping) model. KMgSGd materials are proposed as being useful in the energy storage field and for optical applications in various devices.

通过固相反应法，在高温下合成了在蓝贝氏体基质中具有“ x”掺杂速率的Gd ₂ O ₃，其表示为KMgSGd（x = 0.2、0.5、1 mol％）。在具有P2 ₁ 3空间群的简单立方系统中成功获得了纯相。Gd ³⁺可以有效替代Mg ²⁺在贝氏体基质中没有任何变形。KMgSGd（x = 0.5 mol％）被选为最佳离子导体，因为它的活化能低，值为0.29 eV。这些材料中的导电是通过移动阳离子在热搅拌下的迁移来完成的，这由CBH（相关壁垒跳跃）模型解释。提出了KMgSGd材料，其在能量存储领域和在各种装置的光学应用中是有用的。