In this work, facile and low cost electrodeposition method has been used to prepare bismuth vanadate (BiVO₄) thin films on fluorine-doped tin oxide glass in order to study photoelectrochemical water splitting performance. The electrochemical deposition was performed at different times (5, 10, 15, 20, 25, 30, 35 and 40 min) using vanadyl sulfate and bismuth (III) nitrate solutions. The phase and microstructure analyses have been performed using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). The morphological properties of the prepared films are dependent on the electrodeposition time, based on the FE-SEM results. In addition, UV–Vis diffuse reflection spectroscopy was used to confirm the optical absorption properties and band gap of the samples prepared. Linear sweep voltammetry, chronoamperometry and open circuit potential under xenon light irradiation were used to study the photoelectrochemical properties of the films prepared. Variations of the electrodeposition time remarkably changed the photoelectrochemical properties of the films. A high photocurrent density of 0.068 mA cm⁻² at 1 V vs. Ag/AgCl was shown by the film deposited for 30 min. In addition, all the samples showed good photo responses and photo stabilities.

在这项工作中，已使用简便且低成本的电沉积方法制备钒酸铋（BiVO ₄）在掺氟氧化锡玻璃上的薄膜，以研究光电化学水分解性能。使用硫酸氧钒和硝酸铋（III）溶液在不同的时间（5、10、15、20、25、30、35和40分钟）进行电化学沉积。使用X射线衍射（XRD）和场发射扫描电子显微镜（FE-SEM）进行了相和微结构分析。基于FE-SEM结果，制备的膜的形态学性质取决于电沉积时间。此外，使用UV-Vis漫反射光谱法确认所制备样品的光吸收特性和带隙。线性扫描伏安法 计时电流法和氙光照射下的开路电位被用来研究所制备薄膜的光电化学性能。电沉积时间的变化显着改变了薄膜的光电化学性能。0.068 mA厘米的高光电流密度^-2在1V VS。沉积30分钟的薄膜显示出Ag / AgCl。此外，所有样品均显示出良好的光响应和光稳定性。