In this Letter, we report optical confinement in the near-ultraviolet (near-UV) range in ${{\rm Ga}_2}{{\rm O}_3}$ nanowires (NWs) by distributed Bragg reflector (DBR) nanopatterned cavities. High-contrast DBRs, which act as the end mirrors of the cavities of the desired length, are designed and fabricated by focused ion beam etching. The resonant modes of the cavities are analyzed by micro-photoluminescence measurements, analytical models, and simulations, which show very good agreement between each other. Experimental reflectivities up to 50% are obtained over the 350–410 nm region for the resonances in this wavelength range. Therefore, ${{\rm Ga}_2}{{\rm O}_3}$ NW optical cavities are shown as good candidates for single-material-based near-UV light emitters.

中文翻译：

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Ga ₂ O ₃纳米线中的近紫外光腔

在这封信中，我们报告了通过分布式布拉格反射器（DBR）纳米图案化，在$ {{\ rm Ga} _2} {{\ rm O} _3} $纳米线（NWs）中的近紫外光范围内空腔。通过聚焦离子束蚀刻设计和制造高对比度DBR，用作所需长度腔体的端镜。通过微光致发光测量，分析模型和模拟分析了空腔的共振模式，这显示出彼此之间非常好的一致性。在此波长范围内的共振范围内，在350-410 nm范围内可获得高达50％的实验反射率。因此，$ {{\ rm Ga} _2} {{\ rm O} _3} $ NW光腔显示为基于单材料的近紫外光发射器的良好候选。