In this paper, a class-AB flipped voltage follower cell with high current driving capability is proposed. The proposed flipped voltage follower (FVF) cell offers increased current sourcing capability and large input/output voltage swing due to the use of bulk-driven and level shifter techniques, respectively. Further, it uses an additional NMOS transistor connected between output and ground terminals to increase the current sinking capability and to reduce the output resistance. The stability analysis has been performed by using Routh–Hurwitz stability criteria which confirms that the proposed FVF cell is stable. The proposed FVF cell also offers a high symmetrical slew rate. The proposed FVF cell has been simulated in Cadence virtuoso analog design environment using BSIM3v3 180 nm CMOS technology and simulation results are presented to validate the effectiveness of the proposed circuit.

本文提出了一种具有高电流驱动能力的AB类翻转电压跟随器电池。所提出的翻转电压跟随器（FVF）单元由于分别使用了体积驱动技术和电平移位器技术而提供了增强的电流源能力和较大的输入/输出电压摆幅。此外，它使用连接在输出端子和接地端子之间的附加NMOS晶体管来增加电流吸收能力并减小输出电阻。通过使用Routh-Hurwitz稳定性标准进行了稳定性分析，这证实了所提出的FVF电池是稳定的。提出的FVF电池还具有高对称摆率。