In this study, two types of ZnO nanorods (NRs) were hydrothermally grown on Si substrates by controlling the location of the Ga dopant. The growth behavior of ZnO NRs grown on the Ga-doped ZnO (GZO) seed layer (NR1s) was affected by the particle size controlled by the Ga dopant, while that of ZnO NRs grown in a Ga-doped aqueous solution (NR2s) was affected by complexes caused by the Ga dopant in the aqueous solution. The photoresponsivity of the ZnO NR1s overall increased with increasing concentration of Ga dopant due to the large surface area related to the density of ZnO NR1s. However, in case of the ZnO NR2s, the photoresponsivity of the undoped ZnO (UZO) NR2s was larger than that of the GZO NR2s due to the larger surface area for oxygen molecule adsorption in the UZO NR2s. Finally, under a 3-mM Ga doping concentration, the photoresponsivity of the ZnO NR1s was approximately 11.5 times higher than that of the ZnO NR2s, indicating that the ZnO NR1s are promising candidates for use in ultraviolet (UV) photodetector applications. These results indicate that when the ZnO NRs are grown using the hydrothermal method, doping at the seed layer is more suitable for high-performance UV photodetectors.

在这项研究中，通过控制Ga掺杂剂的位置，在Si衬底上水热生​​长了两种类型的ZnO纳米棒（NRs）。在Ga掺杂的ZnO（GZO）晶种层（NR1s）上生长的ZnO NRs的生长行为受到Ga掺杂剂控制的粒径的影响，而在Ga掺杂的水溶液（NR2s）中生长的ZnO NRs的生长行为则受到影响。受水溶液中Ga掺杂剂引起的络合物的影响。ZnO NR1s的光响应性总体上随Ga掺杂剂浓度的增加而增加，这归因于与ZnO NR1s密度相关的大表面积。但是，在ZnO NR2s的情况下，未掺杂的ZnO（UZO）NR2s的光响应性大于GZO NR2s，这是因为UZO NR2s中的氧分子吸附表面积更大。最后，在3 mM Ga掺杂浓度下，ZnO NR1s的光响应性比ZnO NR2s高约11.5倍，表明ZnO NR1s是有望用于紫外线（UV）光电探测器应用的候选材料。这些结果表明，当使用水热法生长ZnO NRs时，在种子层进行掺杂更适合于高性能UV光电探测器。