Cr is a metal with lower resistivity (as compared with Si) and positive temperature coefficient of resistance (TCR value) and Si is a semiconductive material with higher resistivity and negative TCR value. For that, the commercial-grade targets of 28 wt.% Cr-72 wt.% Si, 40 wt.% Cr-60 wt.% Si and 55 wt.% Cr-45 wt.% Si were used to deposit the thin-film materials using sputtering method at the same parameters, and their physical and electrical properties were measured and compared under different deposition powers. The crystallization and the surface morphology of the CrSi-based thin-film resistors were measured using X-ray diffraction (XRD) pattern and field emission scanning electron microscopy (FESEM). In order to find the effect of deposition power on the average atomic ratio of Cr and Si, the elemental ratios were also measured as a function of deposition power for different CrSi-based targets by FESEM equipped with Energy-Dispersive X-ray spectroscopy (EDX) for elemental Cr and Si. The effects of Cr concentration and deposition power on the sheet resistances, resistivity and TCR values of the deposited CrSi-based thin-film resistors were also well measured and compared, and the reasons to cause the variations of resistivity and TCR values were also investigated and discussed.

中文翻译：

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沉积参数对高阻CrSi基薄膜电阻器性能的影响

Cr是具有较低电阻率（与Si相比）和正电阻温度系数（TCR值）的金属，而Si是具有较高电阻率和负TCR值的半导体材料。为此，使用 28 wt.% Cr-72 wt.% Si、40 wt.% Cr-60 wt.% Si 和 55 wt.% Cr-45 wt.% Si 的商业级靶材来沉积薄层。 -薄膜材料在相同参数下采用溅射法，并在不同的沉积功率下对其物理和电学性能进行了测量和比较。使用 X 射线衍射 (XRD) 图案和场发射扫描电子显微镜 (FESEM) 测量 CrSi 基薄膜电阻器的结晶和表面形态。为了找到沉积功率对 Cr 和 Si 的平均原子比的影响，还通过配备有元素 Cr 和 Si 的能量色散 X 射线光谱 (EDX) 的 FESEM 测量了元素比率作为不同 CrSi 基靶材的沉积功率的函数。还很好地测量和比较了Cr浓度和沉积功率对沉积的CrSi基薄膜电阻的薄层电阻、电阻率和TCR值的影响，并研究了导致电阻率和TCR值变化的原因。讨论过。