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Ultra-wideband metamaterial absorber doped GaAs in the infrared region
Journal of Electromagnetic Waves and Applications ( IF 1.3 ) Pub Date : 2021-01-06 , DOI: 10.1080/09205071.2020.1870163
Jiufu Ruan 1, 2, 3 , Shengwei Ji 1, 3 , Zhi Tao 1, 3 , Feng Lan 1, 3
Affiliation  

An improved ultra-wideband metamaterial absorber (MA) with high absorptivity in the infrared region is proposed. It features a mixture of copper and GaAs at the top layer, which can greatly raise the bandwidth and absorption rate due to the coupling effect between copper and GaAs. The spectrum with absorption rate of 90% in the infrared region from 98 to 152 THz can be obtained. The input-impedance matching theory, as well as surface current distributions and power loss density have been investigated to analyze the absorption mechanism of the perfect absorption performance. In addition, the MA is insensitive to polarization and incident angle. This work may provide a further step in the development of ultra-broadband devices, such as filters, sensors and energy harvesting and stealth devices.



中文翻译:

超宽带超材料吸收体的红外区掺杂GaAs

提出了一种在红外区域具有高吸收率的改进型超宽带超材料吸收器(MA)。它在顶层具有铜和GaAs的混合物,由于铜和GaAs之间的耦合效应,可以大大提高带宽和吸收率。可以获得在98至152 THz的红外区域具有90%吸收率的光谱。研究了输入阻抗匹配理论,以及表面电流分布和功率损耗密度,以分析理想吸收性能的吸收机理。此外,MA对极化和入射角不敏感。这项工作可能会为超宽带设备(例如滤波器,传感器以及能量收集和隐身设备)的开发提供进一步的步骤。

更新日期:2021-01-06
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