Herein, X‐ray photoelectron spectroscopy (XPS) and absorption spectroscopy are used to investigate the band alignment in a vertical graphene/MoS₂/fluorine tin oxide (FTO) heterostructure and its influence on the resulting photoelectric response. The measured conduction band offset (CBO) value (0.65 eV) is found to be identical for both interfaces, whereas the corresponding valence band offset (VBO) values are found to be significantly different: 2.7 eV for MoS₂/FTO interface and 1.0 eV for graphene/MoS₂ interface. The separation of e–h pairs takes place in the built‐in electric field between graphene and FTO, across the MoS₂ film. The successful operation of the photodetector, based on this heterostructure, is also demonstrated, and the measured photoresponsivity and external quantum efficiency (EQE) values are found to be about 0.7 A W⁻¹ and 0.03, respectively, which indicates the efficient separation of the photogenerated charge carriers. The obtained results demonstrate not only the high potential of XPS diagnostics in the heterostructures preparation with the desired properties but also the good quality of MoS₂ films, obtained by the sulfurization technique.

中文翻译：

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石墨烯/ MoS2 /氟氧化锡异质结在光电探测器中的能带对准

本文中，X射线光电子能谱（XPS）和吸收能谱用于研究垂直石墨烯/ MoS ₂ /氟氧化锡（FTO）异质结构中的能带排列及其对所得光电响应的影响。发现两个接口的测量导带偏移（CBO）值（0.65 eV）相同，而相应的价带偏移（VBO）值却显着不同：MoS ₂ / FTO接口为2.7 eV ，1.0 eV用于石墨烯/ MoS ₂接口。e–h对的分离发生在横跨MoS _2的石墨烯和FTO之间的内置电场中电影。还证明了基于这种异质结构的光电探测器的成功运行，并且测得的光响应性和外部量子效率（EQE）值分别约为0.7 A W ^-1和0.03，这表明光生光子的有效分离电荷载体。获得的结果不仅证明了XPS诊断技术在具有所需性能的异质结构制备中的巨大潜力，而且证明了通过硫化技术获得的MoS ₂膜的优良品质。