Grinding force is a crucial factor that affects the machining accuracy, wheel wear and the material removal efficiency for precision machining of semiconductor materials under nanometer accuracy. However, due to the complex rotational motion of both the grinding wheel and wafer workpiece, in situ measurement of the grinding force in wafer self-rotating grinding is still a big challenge. In this paper, a novel grinding force measurement method in silicon wafer grinding process is developed. The method is achieved by embedding four thin film force sensors into a self-designed force measurement device and real-time monitoring through wireless signal transmission. Based on this method, the grinding force under 5 groups of process parameters are measured. For the first time, the variations of grinding force during the whole grinding process are revealed real-timely. Effects of process parameters, i.e. spindle rotational speed and feed rate, on grinding force are investigated, and the parameters are also optimized based on the theory of specific grinding energy. The test results show that the force measurement method has the advantages of high precision, reliable and convenient implementation.

磨削力是影响纳米精度下半导体材料精密加工的加工精度，砂轮磨损和材料去除效率的关键因素。但是，由于砂轮和晶片工件的旋转运动复杂，在晶片自转磨削中对磨削力进行原位测量仍然是一个很大的挑战。本文提出了一种在硅片研磨过程中测量研磨力的新方法。该方法是通过将四个薄膜力传感器嵌入到自行设计的力测量设备中并通过无线信号传输进行实时监控来实现的。基于此方法，测量了五组工艺参数下的磨削力。首次，实时显示整个磨削过程中磨削力的变化。研究了加工参数（即主轴转速和进给速度）对磨削力的影响，并根据比磨削能的理论对参数进行了优化。测试结果表明，测力法具有精度高，可靠，实施方便的优点。