Pb⁺²-doped TiO₂ thin films were prepared by a sol-gel dip-coating method on silicon substrate. The films were annealed at different temperatures (600–1000 °C) and at various thicknesses (68–120 nm). XRD, Raman and FTIR spectroscopy shows the crystallization of thin films on anatase, rutile and PbTiO₃ phase, as annealing temperature increase from 600 °C to 1000 °C respectively. The SEM micrographs indicate that the morphology transform with increase of annealing temperature. At lower temperature we observed only anatase and rutile phase, with the increase of annealing temperature the formation of lead titanate (PbTiO₃) take place. Photoluminescence and reflectance spectrum of Pb doped TiO₂ thin films show absorption bands and a shift to higher wavelengths (lower energy). These results proved that doping lead in TiO₂ modify the levels impurities and decreased the optical gap of TiO₂ thin films which enhanced the optical properties.

通过溶胶-凝胶浸涂法在硅基底上制备了Pb ⁺²掺杂的TiO ₂薄膜。薄膜在不同的温度（600–1000°C）和不同的厚度（68–120 nm）下退火。XRD，拉曼光谱和FTIR光谱表明，随着退火温度分别从600°C升高到1000°C ，锐钛矿，金红石和PbTiO ₃相上的薄膜结晶。SEM照片表明，随着退火温度的升高，形貌发生转变。在较低的温度下，我们仅观察到锐钛矿和金红石相，随着退火温度的升高，钛酸铅（PbTiO ₃）的形成发生了。掺Pb的TiO _2的光致发光和反射光谱薄膜显示吸收带并转移到更高的波长（更低的能量）。这些结果证明，TiO ₂中的掺杂铅改变了杂质含量并减小了TiO ₂薄膜的光学间隙，从而增强了光学性能。