Low-temperature synthesis of highly transparent conducting B-doped (p-type) nc-SiO_X:H films has been pursued by 13.56 MHz plasma-CVD, using a combination of SiH₄, CO₂ and B₂H₆, diluted by H₂ and He. Higher substrate temperature (T_S) encourages nanocrystallization in B-doped nc-SiO_X:H network by reducing bonded H-content, while bonded O-content also reduces simultaneously. At optimized T_S = 150 °C, p–nc-SiO_X:H film having an optical band gap ~1.98 eV, high conductivity ~0.18 S cm⁻¹, has been obtained via dopant-induced escalation of the electrically active carriers at a deposition rate ~5.3 nm/min. The p–nc-SiO_X:H film appears as a promising window layer for the top sub-cell of multi-junction silicon solar cells. A single-junction nc-Si:H based p-i-n solar cell of efficiency (η) ~7.14% with a current-density (J_SC) ~14.18 mA/cm², reasonable fill-factor (FF) ~66.2% and open-circuit voltage (V_OC) ~0.7606 V has been fabricated, using the optimum p-type nc-SiO_X:H as the window layer deposited at T_S = 150 °C.

在13.56 MHz等离子体化学气相沉积中，采用SiH ₄，CO ₂和B ₂ H ₆的组合，并通过稀释后，进行了高透明导电B掺杂（p型）nc-SiO _X：H薄膜的低温合成。H ₂和He。较高的基片温度（T_小号）鼓励纳米化在B掺杂的NC-的SiO _X通过减少键合的H含量H网络，而键合的O形内容也同时减少。在优化的T _S  = 150°C时，p –nc-SiO _X：H薄膜的光学带隙为〜1.98 eV，高电导率为〜0.18 S cm ^-1已经通过掺杂剂诱导的电活性载流子以约5.3 nm / min的沉积速率递增而获得。所述p -NC-的SiO _X：H膜显示为用于多结硅太阳能电池的顶部子电池的有前途的窗口层。单结nc-Si：H基pin太阳能电池，效率（η）〜7.14％，电流密度（J _SC）〜14.18 mA / cm ²，合理的填充系数（FF）〜66.2％，开路电路电压（V _OC）〜0.7606 V具有被制造，使用最优p型NC-的SiO _X：H沉积在T窗口层_小号 = 150℃。