Magnetoresistance (MR) in thin films stems from different types of scattering mechanism present in the film. We report a systematic study of the temperature-dependent magnetoresistance behaviour in the pulsed DC magnetron sputtered Ni₈₁Fe₁₉ thin film on Si (100). X-ray diffraction study reveals the polycrystalline nature of the film along with the presence of preferred orientation. X-ray reflectivity measurement shows very low interface roughness (0.55 ± 0.04 nm). Temperature-dependent resistivity measurement is performed over a temperature range of 25–300 K, unveiling the dominance of electron-magnon scattering and impurity scattering at lower temperature (25–250 K) and electron-phonon scattering at higher temperature (above 250 K). In the investigated temperature range (30–300 K), the MR magnitude is found to reduce from 0.97 to 0.51% with increment in measurement temperature from 30 to 300 K. This reduction is attributed to the enhancement in phonon scattering at higher temperatures, and relatively suppressed ordering influence of magnetic field at higher temperature due to higher thermal activation energy and impurity scattering.

薄膜中的磁阻（MR）源于薄膜中存在的不同类型的散射机制。我们报告了对脉冲直流磁控溅射Ni ₈₁ Fe ₁₉的温度相关磁阻行为的系统研究Si（100）上的薄膜。X射线衍射研究揭示了膜的多晶性质以及优选取向的存在。X射线反射率测量显示出非常低的界面粗糙度（0.55±0.04 nm）。温度相关的电阻率测量是在25–300 K的温度范围内进行的，揭示了较低温度（25–250 K）下电子-马农散射和杂质散射以及较高温度（250 K以上）上的电子-声子散射的优势。 。在所研究的温度范围（30–300 K）中，随着测量温度从30升高至300 K，MR值从0.97降低至0.51％。这种降低归因于较高温度下声子散射的增强，