In the present study, pure and Al-doped ZnO thin films have been deposited on glass substrates using a cost-effective nebulizer spray technique. The structural, topographical, photoluminescence, and UV detector properties of ZnO thin films have been studied for various aluminium-doping concentrations. X-ray diffraction (XRD) studies confirmed the polycrystalline hexagonal structure plane with preferred orientation along (002) direction. The ZnO structural parameters like crystallite size, dislocation density, and strain showing considerable variation with aluminium doping. Atomic force microscope (AFM) images displaying spherical grains and the grain size is increasing with Al concentration. The energy dispersive X-ray (EDX) analysis displays the presence of Zn, Al, and O elements in the deposited thin films. The optical bandgap values are decreased with aluminium doping concentration and the lowest value was observed for the 1% Al doping. Photoluminescence (PL) spectra reveal a sharp emission peak at 390 nm and peak with the shoulder at 554 nm. The Responsivity, External quantum efficiency, and Detectivity of pure and doped samples are in the range of 0.22–0.38 AW^-1, 70–123%, and 1.22 × 10¹⁰ to 1.70 × 10¹⁰ Jones, respectively. The better photodetection results are observed for the 1% Al-doped ZnO thin film which indicates it is a good candidate for photo-detector applications.

在本研究中，已经使用经济高效的喷雾器喷涂技术在玻璃基板上沉积了纯Al掺杂的ZnO薄膜。对于各种铝掺杂浓度，已经研究了ZnO薄膜的结构，形貌，光致发光和UV检测器特性。X射线衍射（XRD）研究证实，多晶六边形结构平面沿（002）方向具有较好的取向。ZnO的结构参数（如微晶尺寸，位错密度和应变）随铝掺杂的变化而变化很大。原子力显微镜（AFM）图像显示球形晶粒，并且晶粒尺寸随Al浓度的增加而增加。能量色散X射线（EDX）分析显示，沉积的薄膜中存在Zn，Al和O元素。光学带隙值随铝掺杂浓度而降低，而对于1％Al掺杂观察到最低值。光致发光（PL）光谱显示在390 nm处有一个尖锐的发射峰，并且在554 nm处有一个肩峰。纯样品和掺杂样品的响应度，外部量子效率和检测率在0.22-0.38 AW的范围内^-1，70-123％，和1.22×10 ¹⁰〜1.70×10 ¹⁰琼斯，分别。对于掺杂1％Al的ZnO薄膜，观察到更好的光电检测结果，这表明它是光电检测器应用的良好候选者。