Conduction type control of transparent conducting materials is challenging. In this study, novel conductive p-type and n-type Cu-doped Mg(OH)₂ thin films are obtained. The thin films are fabricated by both potentiostatic and galvanostatic electrochemical deposition with solutions containing 20 mM Mg(NO₃)₂ and different amounts (1–20 mM) of Cu(NO₃)₂. All specimens show high transmittance values more than 90% in the visible range. The galvanostatically deposited films are n-type with 1 mM Cu in the solution while they are p-type with Cu amount of 3 mM or more. X-ray photoelectron spectroscopy results ascertain the presence of Cu⁺ and less amount of Cu²⁺ in the films. A p-n homojunction is fabricated by potentiostatic and galvanostatic deposition, and its current-voltage characteristic shows rectification properties.

透明导电材料的导电类型控制具有挑战性。在这项研究中，获得了新型的导电p型和n型掺杂Cu的Mg（OH）₂薄膜。薄膜是通过恒电位和恒电流电化学沉积方法制成的，溶液中含有20 mM Mg（NO ₃）₂和不同量（1–20 mM）的Cu（NO ₃）₂。所有样品在可见光范围内均显示超过90％的高透射率值。恒电流沉积膜在溶液中具有1 mM Cu呈n型，而在Cu量大于或等于3 mM时呈p型。X射线光电子能谱结果确定了Cu ⁺的存在和少量的Cu ²⁺在电影中。通过恒电位和恒电流沉积制备pn同质结，其电流-电压特性显示出整流特性。