CuInSe₂ (CIS) thin films were deposited onto FTO/glass substrates by continuous current potentiostatic electrodeposition method. The aqueous deposition bath was prepared from a pH = 3.0 NaBF₄ supporting electrolyte, containing CuSO₄, In₂(SO₄)₃, and SeO₂ precursors. The characterization of these samples was done by scanning electron microscopy, energy-dispersive X-ray spectrometry, X-ray diffractometry, Raman spectroscopy, and optical spectroscopy. The experimental techniques have allowed the understanding of the atomic concentration dynamics of samples, and its relationship with the concentration of precursors. It was obtained p-type polycrystalline semiconductor samples, with 0.95 eV gap energy; the crystalline quality of these samples was also verified. Besides this, the nucleation and growth of CIS were studied during its electrochemical deposition on top of FTO, and vitreous carbon electrodes. Chronoamperometry I-t plots permitted the study of current transients, through classic nucleation models, which were used to understand the nucleation mechanism which occurred during the electrodeposition process, besides predicting some of its characteristic properties, as its diffusion coefficient, density of active sites, and nucleation rate constant per active site. Atomic force microscopy measurements were used to investigate the first stages of growth of these CIS films, deposited at different overpotentials. Preliminary devices CIS/In₂Se₃/FTO were mounted, with In₂Se₃ (IS) film also deposited by continuous current electrodeposition. Its electrical properties were analyzed, revealing a Schottky diode like behavior; there were observed light dependent open circuit voltage generation and resistance drop, disclosing promising characteristics for photovoltaic production.

通过连续电流恒电位电沉积法将CuInSe ₂（CIS）薄膜沉积到FTO /玻璃基板上。由pH ＝ 3.0的NaBF ₄支持电解质制备含水沉积浴，所述支持电解质包含CuSO ₄，In ₂（SO ₄）₃和SeO _2。前体。这些样品的表征通过扫描电子显微镜，能量色散X射线光谱法，X射线衍射法，拉曼光谱法和光学光谱法完成。实验技术使人们能够了解样品的原子浓度动态及其与前体浓度的关系。得到的p型多晶半导体样品的带隙能为0.95 eV ；这些样品的结晶质量也得到了验证。除此之外，还研究了CIS在FTO和玻璃碳电极上的电化学沉积过程中的形核和生长。计时我-牛逼该图允许通过经典的成核模型研究电流瞬变，该模型用于了解电沉积过程中发生的成核机理，并预测其某些特征，如扩散系数，活性位点密度和成核速率常数每个活动站点。原子力显微镜测量用于研究这些CIS膜生长的第一阶段，这些阶段沉积在不同的超电势下。预先安装了CIS / In ₂ Se ₃ / FTO装置和In ₂ Se ₃（IS）膜也通过连续电流电沉积而沉积。分析了其电性能，揭示了肖特基二极管的行为。观察到了光依赖的开路电压产生和电阻降，揭示了光伏生产的有希望的特性。