Insulating materials used for the packaging of integrated circuits play an important role in the electrical performance of the new System-in-Package (SiP), designed to support flows greater than 10 Gbits/s. These insulating materials must have a low relative permittivity and low dielectric losses up to several tens of GHz in order to insure the integrity of the propagated signals. In this paper the in-situ characterization of molding resins and core materials, used respectively for the encapsulation and the package substrate of chips of new 3D SiP on Board (SiPoB 3D), is carried out up to 100 ​GHz. These characterizations are performed after the manufacturing process (deposition, drying) of insulators and in their final conditions of use (thicknesses of a few microns, thinning, polishing) since their permittivity is highly dependent on the entire process. The characterization methodology is based on two original techniques: the analysis of the signal propagation on specially optimized CPW lines (coplanar lines) and the analysis of the reflection coefficient measured at the end of a CPW RF probe directly set down the surface of the insulator sample. This new technique makes it possible to overcome whole metallization steps required to achieve waveguide structures used in most material characterization techniques. In addition, the complex permittivity can be 2D-scanned on the entire surface area of the sample of material under test with our technique.

用于集成电路封装的绝缘材料在新型系统级封装（SiP）的电气性能中起着重要作用，该系统旨在支持大于10 Gbit / s的流量。这些绝缘材料必须具有高达几十GHz的低相对介电常数和低介电损耗，以确保传播信号的完整性。在本文中，模制树脂和芯材的原位表征分别在高达100 GHz的频率下进行，这些模制树脂和芯材分别用于封装新的3D SiP板载芯片和封装基板。这些特征是在绝缘子的制造过程（沉积，干燥）之后以及它们的最终使用条件（几微米的厚度，变薄，抛光），因为它们的介电常数在很大程度上取决于整个过程。表征方法基于两种原始技术：对经过特别优化的CPW线（共面线）上的信号传播进行分析，以及在CPW RF探针末端直接沿绝缘子样本表面测得的反射系数进行分析。这项新技术使得有可能克服实现大多数材料表征技术中使用的波导结构所需的整个金属化步骤。此外，可以使用我们的技术在被测材料样品的整个表面积上进行二维介电常数扫描。在专门优化的CPW线（共面线）上进行信号传播分析以及在CPW RF探针末端测得的反射系数分析直接将绝缘子样品的表面放下。这项新技术使得有可能克服实现大多数材料表征技术中使用的波导结构所需的整个金属化步骤。此外，可以使用我们的技术在被测材料样品的整个表面积上进行二维介电常数扫描。在专门优化的CPW线（共面线）上进行信号传播分析以及在CPW RF探针末端测得的反射系数分析直接将绝缘子样品的表面放下。这项新技术使得有可能克服实现大多数材料表征技术中使用的波导结构所需的整个金属化步骤。此外，可以使用我们的技术在被测材料样品的整个表面积上进行二维介电常数扫描。