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On the Photoresponse Kinetics and Amplitude of Silicon Photoelectric Multipliers
Semiconductors ( IF 0.7 ) Pub Date : 2021-01-04 , DOI: 10.1134/s1063782620130023
M. A. Asayonok , A. O. Zenevich , E. V. Novikov

Abstract—The influence of the supply voltage and temperature on the characteristics of the photoresponse of silicon photoelectric multipliers has not been adequately studied. In this study, the influence of these factors on the time characteristics of the photoresponse of silicon photoelectric multipliers is investigated. A block diagram of the experimental system is presented. In the system, the optical radiation source is a light-emitting diode, and photoresponse recording is provided by a specialized hardware–software complex. The results of studies of the effect of the supply voltage and temperature on the photoresponse kinetics and amplitude of silicon photoelectric multipliers, fabricated on the basis of n+np+- and p+pn+ structures, upon pulsed optical excitation at a wavelength of 630 nm are reported. It is established that, upon the exposure of silicon photoelectric multipliers to optical pulses identical in duration, wavelength, and energy at the same temperature and overvoltage, the photoresponse duration is longer for silicon photoelectric multipliers based on the p+pn+ structure. It is found that the photoresponse rise time is associated with the photocurrent amplification coefficient and the photosignal pulse relaxation time is associated with the series resistance of silicon photoelectric multipliers. The photoresponse rise time is longer for silicon photoelectric multipliers with a larger photocurrent-amplification coefficient. A longer photoresponse decay time is inherent in silicon photoelectric multipliers with higher series resistance.



中文翻译:

硅光电倍增管的光响应动力学和振幅

摘要—电源电压和温度对硅光电倍增管光响应特性的影响尚未得到充分研究。在这项研究中,研究了这些因素对硅光电倍增管光响应时间特性的影响。给出了实验系统的框图。在该系统中,光辐射源是发光二极管,而光响应记录则由专门的硬件-软件组合提供。研究电源电压和温度对基于n +np +制备的硅光电倍增管的光响应动力学和幅度的影响的结果-和p +pn +结构,在630 nm波长的脉冲光激发下被报道。可以确定的是,在相同的温度和过电压下,当硅光电倍增器暴露于持续时间,波长和能量相同的光脉冲时,基于p +pn +的硅光电倍增器的光响应持续时间更长。结构体。发现光响应上升时间与光电流放大系数有关,而光信号脉冲弛豫时间与硅光电倍增管的串联电阻有关。对于光电流放大系数较大的硅光电倍增管,光响应上升时间较长。具有较高串联电阻的硅光电倍增器具有更长的光响应衰减时间。

更新日期:2021-01-04
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