• Phase-change memory based on Ta-doped antimony telluride (Sb₂Te) exhibits both high-speed characteristics and excellent high-temperature characteristics, allowing improved performance and new applications.

• The high coordination number of Ta and the strong bonds between Ta and Sb/Te atoms enhance the robustness of the amorphous structure, ensuring good thermal stability.

• Through the three-dimensional limit, the formation of small grains reduces the power consumption and improves the long-term endurance.

中文翻译：

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Ta-Doped Sb 2 Te 可实现具有出色高温工作特性的超快相变存储器

• 基于 Ta 掺杂碲化锑 (Sb ₂ Te) 的相变存储器兼具高速特性和出色的高温特性，可提高性能和新应用。

• Ta的高配位数以及Ta和Sb/Te原子之间的强键增强了非晶结构的稳健性，确保了良好的热稳定性。

• 通过三维极限，小晶粒的形成降低了功耗，提高了长期续航能力。