C_f/SiC composites were joined to itself with (and without) Mo interlayer at 1150 °C for 10 min by Cu–Pd–V filler metal. For two kinds of the joints, after the interfacial reactions, continuous V–C layers and dispersive V–C particles were formed at surface of the joined C_f/SiC composite. It was worth noting that much more dispersive particles were formed in case of C_f/SiC–Mo–C_f/SiC joint which was favorable to the C_f/SiC joint strength. Meanwhile, when adding a Mo interlayer in C_f/SiC joint, a continuously distributed (V, Mo)–Si compounds with high melting point was formed near the Mo interface, which can strengthen the joining interface and improve the high-temperature strength. As a consequence, the joint strength at room temperature was remarkably increased to 148.9 MPa from 99.3 MPa by inserting the Mo interlayer. When tested at 800 °C, the average three-point bend strength of the joints was improved to 120.1 MPa, nearly twice of that without Mo interlayer.

C _f / SiC复合材料通过Cu–Pd–V填充金属在1150°C的条件下（带有或不带有Mo中间层）连接10分钟。对于两种接头，经过界面反应，在连接的C _f / SiC复合材料的表面形成了连续的V–C层和分散的V–C颗粒。值得注意的是，在C _f / SiC–Mo–C _f / SiC接头的情况下，形成了更多的分散颗粒，这有利于C _f / SiC接头的强度。同时，在C _f中添加Mo中间层时/ SiC接头，在Mo界面附近形成了连续分布的，高熔点的（V，Mo）-Si化合物，可以增强接合界面并提高高温强度。结果，通过插入Mo中间层，室温下的接合强度从99.3MPa显着增加到148.9MPa。在800°C下测试时，接头的平均三点弯曲强度提高到120.1 MPa，几乎是没有Mo夹层的三倍。