An anisotropic etching of 1 eV Ga 0.92 In 0.08 N 0.03 As 0.97 grown on (100) p-type GaAs substrate was investigated. Effects of the V-groove etching profile and metallization on the photovoltaic performance of the GaInNAs nipi solar cell with five periods are presented. Experimental results were supported by simulation studies considering the metal–semiconductor junction characteristics in the electrodes of nipi photovoltaic device. Standard wet etching processes at room temperature is applied using sulfuric acid based H 2 SO 4 : H 2 O 2 : H 2 O [1:8:8] solution to form the V-groove shape on the nipi sample. The etching characteristics in the [100] and $$\left\langle {011} \right\rangle$$ 011 crystal directions are determined by using an interdigitated square spiral photolithographic mask. The scanning electron microscope (SEM) is used to analyze the V-groove etch profile. Two type of V-grooves achieved, one of them is in the $$\left[ {1\bar{1}1} \right]$$ 1 1 ¯ 1 direction and suitable to form metal electrodes for nipi layers and the second one is in $$\left[ {\bar{1}11} \right]$$ 1 ¯ 11 direction can be called a dovetail groove and not suitable for metal coating. Experimentally, the improvements observed in the short circuit current, open circuit voltage, and efficiency of the device despite some metallization failures. The effect of the metallization quality on the response to the spectrum can be clearly seen from the photovoltage spectrum. Essentially, these experimental results show that GaInNAs nipi devices have the potential to become high efficiency solar cells. Moreover, it can be possible to achieve high performance by integrating nipi devices into multijunction solar cells.

中文翻译：

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V型槽制作的GaInNAs nipi太阳能电池结构研究

研究了在 (100) p 型 GaAs 衬底上生长的 1 eV Ga 0.92 In 0.08 N 0.03 As 0.97 的各向异性蚀刻。介绍了 V 形槽蚀刻轮廓和金属化对具有五个周期的 GaInNAs nipi 太阳能电池光伏性能的影响。考虑到 nipi 光伏器件电极中金属-半导体结特性的模拟研究支持了实验结果。使用基于硫酸的 H 2 SO 4 : H 2 O 2 : H 2 O [1:8:8] 溶液在室温下进行标准湿蚀刻工艺，以在 nipi 样品上形成 V 形槽形状。[100] 和 $$\left\lange {011} \right\rangle$$ 011 晶向的蚀刻特性是通过使用叉指方形螺旋光刻掩模确定的。扫描电子显微镜 (SEM) 用于分析 V 形槽蚀刻轮廓。实现了两种 V 型槽，一种是在 $$\left[ {1\bar{1}1} \right]$$ 1 1¯ 1 方向，适合形成 nipi 层的金属电极，第二种是在 $$\left[ {1\bar{1}1} \right]$$ 1 1¯ 1 方向上一个在$$\left[ {\bar{1}11} \right]$$ 1¯ 11 方向可以称为燕尾槽，不适用于金属涂层。在实验上，尽管存在一些金属化失败，但在短路电流、开路电压和器件效率方面观察到了改进。从光电压谱可以清楚地看出金属化质量对光谱响应的影响。从本质上讲，这些实验结果表明 GaInNAs nipi 器件具有成为高效太阳能电池的潜力。而且，