In the present era, with the advancement of various non-conventional devices, hardware components dimensions are shrinking to great extent. Among those, significant part of researchers focus is drawn by Tunnel Field Effect Transistors (TFETs), because of their fundamental attribute of carriers conduction through built-in tunnelling mechanism. In this work, an asymmetric gate Tunnel Field Effect Transistor (TFET) is reported and discussed. This device structure relies on Asymmetric Dual Material Double Gate Tunnel Field Effect Transistor (ADMDG TFET) with reduced oxide thickness of 0.5 nm and optimised metal work function used at the gate terminal of the proposed TFET. For the performance analysis of such a short channel device, the relevant parameters, like threshold voltage, electric field, drain current, surface potential, Ion, Ioff and Subthreshold Swing (SS), have been considered. The proposed structure is simulated by means of the 2-D Sentaurus TCAD tool. The results report significantly low OFF-state current (I_off), considerably improved ON-state current (Ion), and enhanced SS.

在当今时代，随着各种非常规设备的发展，硬件组件的尺寸正在大大缩小。其中，研究人员关注的重点是隧道场效应晶体管（TFET），因为它们具有通过内置隧穿机制进行载流子传导的基本属性。在这项工作中，报告并讨论了非对称栅极隧道场效应晶体管（TFET）。该器件结构依赖于非对称双材料双栅极隧道场效应晶体管（ADMDG TFET），氧化物厚度减小了0.5 nm，并且在所建议的TFET的栅极端子处使用了优化的金属功函数。为了分析此类短通道设备，需要相关参数，例如阈值电压，电场，漏极电流，表面电势，离子，已经考虑了Ioff和亚阈值摆动（SS）。所提出的结构是通过二维Sentaurus TCAD工具进行仿真的。结果报告关闭状态电流非常低（I_off），大大改善了导通电流（Ion），并增强了SS。