Aluminium nitride thin-films (AlN) were fabricated by a DC-magnetron sputtering technique at different background pressures while maintaining the same deposition conditions. The influence of varying sputtering pressure on the structural and optical properties of AlN thin-films was investigated. XRD measurements were utilized to determine the structural properties of the deposited AlN thin-films such as strain, stress, crystallite size, and crystalline density. They confirmed the hexagonal wurtzite structure of AlN thin-films and the increase in the degree of c-axis orientation as the sputtering pressure decreases. The optical properties of AlN thin-films, deposited on glass substrates, were analyzed by means of transmittance and absorption spectra using a UV–Vis spectrophotometer. The results have shown that an increase in the sputtering pressure leads to a shift of the threshold transmittance towards the lower wavelength range. This results in widening the optical bandgap and decreasing both the refractive index and the extinction coefficient. The dispersion of the refractive index is investigated according to the Wemple–DiDomenico single oscillator model and the model parameters (such as effective single oscillator \({E}_{0}\), dispersion energy \({E}_{d}\), zero-frequency dielectric constant \({\varepsilon }_{0}\) and optical moments) were estimated accordingly.

氮化铝薄膜（AlN）是通过DC磁控溅射技术在不同的背景压力下制造的，同时保持了相同的沉积条件。研究了溅射压力的变化对AlN薄膜结构和光学性能的影响。利用XRD测量来确定沉积的AlN薄膜的结构特性，例如应变，应力，微晶尺寸和晶体密度。他们证实了AlN薄膜的六方纤锌矿结构以及随着溅射压力降低c轴取向度的增加。使用紫外可见分光光度计通过透射率和吸收光谱分析沉积在玻璃基板上的AlN薄膜的光学特性。结果表明，溅射压力的增加导致阈值透射率向较低波长范围偏移。这导致加宽光学带隙并降低折射率和消光系数。根据Wemple–DiDomenico单振荡器模型和模型参数（例如有效单振荡器）研究折射率的色散相应地估计了\（{E} _ {0} \），色散能量\ {{E} _ {d} \），零频介电常数\ {{varepsilon} _ {0} \}和光学矩。 。