This paper presents an ultra-wideband (UWB) low-noise amplifier (LNA) with extremely flat-high-gain and low-noise figure (NF). In traditional resistive feedback topology, input matching, gain, and NF cannot be balanced. For better performance trade-offs in UWB design, a novel emitter-follower resistive feedback (EFRFB) is introduced, which utilizes a common-collector amplifier followed by a feedback resistor to flatten the gain (the ripple reduced by 2.3 dB) while alleviating the constraints between the gain and input matching. The enhanced gain without restraint by S11 is exactly required for noise reduction technology. Moreover, a peaking inductor and two resistors are adopted to improve bandwidth and output matching, respectively. The proposed LNA is implemented in a 0.18-μm SiGe BiCMOS technology and occupies 0.15 mm 2 without pads. Measurements demonstrate that the LNA has a gain of 19.5 dB with ripple < 0.6 dB, a minimum NF of 2.8 dB from 2 to 22 GHz, and an input third-order intercept point (IIP3) of–7.6 dBm at 10 GHz while drawing 10.9 mA from a 3.3 V supply.

中文翻译：

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用于 S-K 波段应用的 SiGe 低噪声放大器中的平坦高增益设计和噪声优化

本文介绍了一种具有极平坦高增益和低噪声系数 (NF) 的超宽带 (UWB) 低噪声放大器 (LNA)。在传统的电阻反馈拓扑中，输入匹配、增益和 NF 无法平衡。为了在 UWB 设计中获得更好的性能权衡，引入了一种新颖的射极跟随器电阻反馈 (EFRFB)，它利用一个共集电极放大器后跟一个反馈电阻来拉平增益（纹波减少 2.3 dB），同时减轻增益和输入匹配之间的约束。无S11约束的增强增益正是降噪技术所需要的。此外，采用峰值电感和两个电阻分别提高带宽和输出匹配。建议的 LNA 采用 0.18-μm SiGe BiCMOS 技术实现，无需焊盘即可占用 0.15 mm 2 。