Thin film hetero-structures (TFHSs) involving metal oxide thin films and noble metal nanoparticles are very important for many optoelectronics based device applications. This work reports the growth, characterization, and tuning of photoluminescence and I–V properties of TFHSs involving zinc oxide (ZnO) and gold nanoparticles (GNPs). ZnO thin films and GNPs were respectively deposited by the Pulsed Laser Deposition (PLD) and DC sputtering with subsequent annealing. Three different TFHSs were prepared by varying the relative positions of ZnO and GNPs, namely Si-GNPs-ZnO, Si-ZnO-GNPs, and Si-ZnO-GNPs-ZnO. X-ray diffraction results confirmed the high crystallinity of the films, with single phase nature of the ZnO and GNPs. Scanning electron microscopy micrograph analysis confirmed that the morphology of structures containing both GNPs and ZnO is influenced by the bottom layer. Diffuse reflectance spectroscopy results also indicated that the position of GNPs relative to ZnO affects the plasmon resonance of GNPs as well as the overall optical properties of the TFHSs. Photoluminescence studies revealed that the presence of GNPs affects the defect concentration in the TFHSs. The I–V characteristics showed that the TFHSs where ZnO contains GNPs in embedded form are better suited for photodiode application. This study adds a new dimension to the research on optoelectronics devices.

涉及金属氧化物薄膜和贵金属纳米粒子的薄膜异质结构（TFHS）对于许多基于光电器件的应用而言非常重要。这项工作报告了涉及氧化锌（ZnO）和金纳米颗粒（GNP）的TFHS的生长，表征和光致发光以及I-V特性的调整。通过脉冲激光沉积（PLD）和DC溅射分别沉积ZnO薄膜和GNP，随后进行退火。通过改变ZnO和GNP的相对位置来制备三种不同的TFHS，即Si-GNPs-ZnO，Si-ZnO-GNPs和Si-ZnO-GNPs-ZnO。X射线衍射结果证实了膜的高结晶度，具有ZnO和GNP的单相性质。扫描电子显微镜显微照片分析证实，同时含有GNP和ZnO的结构的形态受到底层的影响。漫反射光谱法结果还表明，GNP相对于ZnO的位置影响GNP的等离子体激元共振以及TFHS的整体光学性质。光致发光研究表明，GNP的存在会影响TFHS中的缺陷浓度。I–V特性表明，其中ZnO包含嵌入形式的GNP的TFHS更适合光电二极管应用。这项研究为光电子器件的研究增加了新的维度。漫反射光谱法结果还表明，GNP相对于ZnO的位置影响GNP的等离子体激元共振以及TFHS的整体光学性质。光致发光研究表明，GNP的存在会影响TFHS中的缺陷浓度。I–V特性表明，其中ZnO包含嵌入形式的GNP的TFHS更适合光电二极管应用。这项研究为光电子器件的研究增加了新的维度。漫反射光谱法结果还表明，GNP相对于ZnO的位置影响GNP的等离子体激元共振以及TFHS的整体光学性质。光致发光研究表明，GNP的存在会影响TFHS中的缺陷浓度。I–V特性表明，其中ZnO包含嵌入形式的GNP的TFHS更适合光电二极管应用。这项研究为光电子器件的研究增加了新的维度。