The low-buckled material silicene undergoes abundant topological phase transitions under external fields. The applications in transport related to the topological properties remain the focus of attention. Utilizing the Berry curvature formula and Boltzmann transport equation, we investigate the spin- and valley-dependent anomalous Nernst effect in silicene, which is subjected to the antiferromagnetic field and perpendicular electric field. The results reveal that the antiferromagnetic field can be used to modulate the pure spin Nernst current; the pure valley Nernst current appears only when electric field exists; the charge Nernst current needs both fields. It is found that the inflection points on the Nernst conductivity correspond exactly to the phase transformation boundary. In the quantum spin Hall (QSH) phase, the spin beam splitting can be realized, in the quantum valley Hall (QVH) phase, the valley beam is split, and in the spin-polarized quantum anomalous Hall (SQAH) phase, the single spin and valley beam can be collected. These findings related to topology are expected to facilitate some applications in spin and valley caloritronics and thermal logical devices.

低屈曲材料硅在外部场下经历大量的拓扑相变。在运输中与拓扑特性有关的应用仍然是关注的焦点。利用Berry曲率公式和Boltzmann输运方程，我们研究了受到反铁磁场和垂直电场作用的硅中自旋和谷相关的能斯特效应。结果表明，反铁磁场可用于调制纯自旋能斯特电流。仅当存在电场时，才会出现纯谷能斯特电流。能斯特电流的电荷需要两个场。发现能斯特电导率上的拐点正好对应于相变边界。在量子自旋霍尔（QSH）阶段，可以实现自旋光束分裂，在量子谷霍尔（QVH）相中，将谷光束分裂；在自旋极化量子异常霍尔（SQAH）相中，可以收集单个自旋和谷光束。这些与拓扑有关的发现有望促进自旋和谷量热电子器件和热逻辑器件的某些应用。