We study the temperature stability of stimulated emission (SE) in HgCdTe/CdHgTe quantum well (QW) heterostructures emitting in the mid-infrared range at wavelengths 7–13 μm. For a series of samples with different band gap energies, maximum operating temperatures at which SE could be achieved are shown to follow closely the characteristic Auger threshold energies derived from the band spectra of the respective QWs. We demonstrate that realization of binary HgTe QWs should provide at least twofold increase in Auger threshold energy compared to the QWs studied (10% Cd content HgCdTe). Thus, one can expect further suppression of non-radiative Auger processes and corresponding increase in operating temperature, the effect being stronger for narrow band gap QWs.

我们研究受激发射（SE）的HgCdTe材料/ CdHgTe量子阱（QW）异质结构的波长处发光7-13在中红外范围中的温度稳定性μ米。对于具有不同带隙能量的一系列样品，显示可以达到SE的最大工作温度紧随从各个QW的带谱得出的特征俄歇阈值能量。我们证明，与研究的QW（10％Cd含量的HgCdTe）相比，实现二元HgTe QW至少应使俄歇阈值能量增加两倍。因此，人们可以期望进一步抑制非辐射俄歇过程，并相应地提高工作温度，对于窄带隙量子阱而言，效果更强。