In this investigation, extensive simulations were performed for an AlGaN/GaN Dual-Gate MISHEMT configuration using ATLAS TCAD to optimize the device design for high power switching applications. We conducted a simulation study for the breakdown characteristics of a Dual-Gate AlGaN/GaN (DG)-MISHEMT with different gate lengths as explained in this paper. The optimized device with 0.25 µm gate length exhibits an breakdown voltage > 700 V and an cut-off frequency of 50 GHz when gate2 (G2) is attached to the source and bias is applied at gate1 (G1). We studied the impact on a breakdown characteristics and the frequency performance of different dimensions such as distance between the two gates (L_GG), gate1-to-source distance (L_G1S) and gate1-to-drain distance (L_G1D). The optimized device design was further used to study the scattering-parameters for different gate combinations. Further improvement in breakdown voltage and Johnson’s figure of merit (f_T × V_BR) is achieved for the DG-MISHEMT with HfO₂–Al₂O₃ as gate insulator.

在这项研究中，使用ATLAS TCAD对AlGaN / GaN Dual-Gate MISHEMT配置进行了广泛的仿真，以优化大功率开关应用的器件设计。如本文所述，我们对具有不同栅极长度的双栅极AlGaN / GaN（DG）-MISHEMT的击穿特性进行了仿真研究。当栅极2（G2）连接到源极并在栅极1（G1）施加偏压时，栅极长度为0.25 µm的优化器件的击穿电压> 700 V，截止频率为50 GHz。我们研究了不同尺寸对击穿特性和频率性能的影响，例如两个栅极之间的距离（L _GG），栅极到源极的距离（L _G1S）和栅极1到漏极的距离（L _G1D））。优化的器件设计被进一步用于研究不同门组合的散射参数。以HfO ₂ -Al ₂ O ₃为栅绝缘体的DG-MISHEMT的击穿电压和Johnson品质因数（f _T  ×V _BR）进一步提高。