This paper presents a two-stage tunable power amplifier (PA) fully-integrated in 130 nm CMOS process. This multi-band PA consists of reconfigurable input, interstage, and output matching networks in order to tune the center frequency in use. The proposed tunable power amplifier enables three different bands with center frequency of 900 MHz, 1450 MHz, and 1900 MHz. By switching these bands, the designed power amplifier covers frequency range of 700 MHz–2200 MHz known as Long-Term Evolution mobile network. As a result, the proposed tunable power amplifier obtains small-signal gain (S21) of 27.8 dB/29.4 dB/28.6 dB, saturated output power (Psat) of 22.4 dBm/23.0 dBm/23.2 dBm, and power added efficiency of 21.0%/23.7%/25.0% at three targeted frequency bands, respectively. The proposed fully-integrated triple-band power amplifier chip layout occupies an area of 2.25 mm² including bond pads.

本文提出了一种完全集成在130 nm CMOS工艺中的两级可调功率放大器（PA）。该多频带功率放大器由可重配置的输入，级间和输出匹配网络组成，以便调整使用中的中心频率。拟议的可调功率放大器可实现三个不同的频段，中心频率分别为900 MHz，1450 MHz和1900 MHz。通过切换这些频段，设计的功率放大器覆盖了700 MHz–2200 MHz的频率范围，即长期演进移动网络。结果，提出的可调功率放大器获得27.8 dB / 29.4 dB / 28.6 dB的小信号增益（S21），22.4 dBm / 23.0 dBm / 23.2 dBm的饱和输出功率（Psat），以及21.0％的功率附加效率在三个目标频段分别为/23.7%/25.0%。^2个，包括焊盘。