Cu or Cu/Au (80nm thick Cu, 50nm thick Au) sputtered on Si were kept at 25 C for a week or annealed at a temperature from 80 to 300 C, then tested for THz emission under femtosecond laser irradiation (35 fs-800nm). THz radiation was detected from samples annealed from 80 to 170 C, which had a Cu₂O/Cu interface as the THz source. Cu/Au/Si annealed at 80 C emitted the highest THz radiation because of high laser absorption by the porous Cu₂O layer formed at low temperature and the Au film reflected THz radiation and/or increased the laser absorption by the Fabry–Prot effect.

中文翻译：

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飞秒激光辐照下Cu ₂ O / Cu界面的太赫兹波发射

溅射在Si上的Cu或Cu / Au（80nm厚的Cu，50nm厚的Au）在25°C下保持一周或在80至300°C的温度下退火，然后在飞秒激光辐照下（35 fs-800nm）测试THz发射）。从80至170℃退火的样品中检测到THz辐射，该样品具有Cu ₂ O / Cu界面作为THz源。在80℃退火的Cu / Au / Si发出最高的THz辐射，这是因为在低温下形成的多孔Cu ₂ O层具有很高的激光吸收率，而Au膜反射了THz辐射和/或通过Fabry–Prot效应提高了激光吸收率。