In this age of interconnection, photodetectors based on two-dimensional materials have been widely used in wearable physiological monitoring systems and wireless sensor networks. Hence, this paper proposes a novel WSe₂ flake photodetector with a metal–semiconductor–metal structure. The photodetector achieved a high responsivity (R_i) of 2.46 A/W under the condition of an external bias voltage at 650 nm as well as an ultra-high detectivity (D^*) of 0.76 × 10¹¹ Jones. The photodetector overcomes the shortcomings of traditional photoelectric detectors with large dark currents. A small dark current of ∼1 nA was obtained, which also creates an opportunity for future high-performance photoelectric devices. After 500 bending cycles, the current and dark current of the device decreased only by 1.7%. Additionally, a self-built test platform indicated that the test device has a device response time of up to 6.51 ms, which creates an opportunity for the high-speed corresponding photoelectric devices based on WSe₂ flakes in the future.

中文翻译：

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具有宽带检测功能的高性能，灵活的WSe2flake光电检测器

在这个互连时代，基于二维材料的光电探测器已广泛用于可穿戴生理监测系统和无线传感器网络中。因此，本文提出了一种具有金属-半导体-金属结构的新型WSe ₂片状光电探测器。在650 nm的外部偏置电压下，光电探测器的高响应率（R _i）为2.46 A / W，超高探测率（D ^*）为0.76×10 ^11。琼斯 光电探测器克服了暗电流大的传统光电探测器的缺点。获得了约1 nA的小暗电流，这也为将来的高性能光电器件创造了机会。经过500次弯曲后，器件的电流和暗电流仅降低了1.7％。另外，一个自建的测试平台表明该测试设备具有高达6.51 ms的设备响应时间，这为将来基于WSe ₂薄片的高速相应光电设备创造了机会。