A GaN ultraviolet photodetector with a petal-like β-Ga₂O₃ microcrystalline layer was prepared on the GaN template using electrochemical anodizing and annealing processes. The petal-like β-Ga₂O₃ microcrystalline layer was found to enhance the absorption of ultraviolet light and suppress the dark current, and a high responsivity from 230 nm (responsivity 8.5 A/W) to 400 nm (responsivity 0.1 A/W) was achieved by the photodetector. The rejection ratio of ultraviolet–visible light is greater than three orders of magnitude representing a high selectivity of ultraviolet light detection. The responsivity slopes of the photodetector under different biases were found to be strongly correlated with the wavelength of light, and the responsivity is much higher than that of conventional metal/insulator/metal wavelength identification photodetectors. This effective method of synthesizing β-Ga₂O₃ crystallites on GaN can be used to enhance the ultraviolet absorption of GaN photodetectors and improve the detection performance.

中文翻译：

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具有花瓣状β-Ga2O3微晶层的GaN紫外光电探测器

采用电化学阳极氧化和退火工艺，在GaN模板上制备了具有花瓣状β - Ga ₂ O ₃微晶层的GaN紫外光电探测器。花瓣状β - Ga ₂ O ₃发现微晶层增强了紫外光的吸收并抑制了暗电流，并且通过光检测器实现了从230nm（响应度8.5A / W）到400nm（响应度0.1A / W）的高响应度。紫外可见光的抑制比大于三个数量级，代表了紫外光检测的高选择性。发现在不同偏压下光电探测器的响应度斜率与光的波长密切相关，并且响应度远高于常规金属/绝缘体/金属波长识别光电探测器的响应度。合成β- Ga ₂ O _3的有效方法 GaN上的微晶可用于增强GaN光电探测器的紫外线吸收并改善检测性能。