We present the design and operation of a specialized Atomic Layer Deposition (ALD) system, dedicated to stable isotopic tracing experiments of oxide film growth, using isotopically labelled water as the oxide reactant. A small chamber volume allows operation with only very small quantities of water vapor, minimising the consumption of the isotopically labelled water. The first results for growth of ZnO and TiO₂ using Diethlyzinc (DEZ) and Tetrakis(dimethylamino)titanium (TDMAT) as the zinc and titanium precursors, and unlabelled water as reactant, are presented, to establish the growth conditions for stoichiometric ZnO and TiO₂ on silicon. Absolute film compositions and thickness are determined by RBS and NRA as a function of vapor pulse duration, number of ALD cycles and substrate temperature. Physical thickness is determined by ellipsometry. The first results obtained for growth of ZnO using water highly enriched in ¹⁸O are also presented.

我们介绍了专门的原子层沉积（ALD）系统的设计和操作，该系统致力于使用同位素标记的水作为氧化物反应物来稳定氧化膜生长的同位素追踪实验。较小的腔室容积允许仅使用非常少量的水蒸气进行操作，从而最大限度地减少了同位素标记的水的消耗。提出了使用二乙二锌（DEZ）和四（二甲基氨基）钛（TDMAT）作为锌和钛前体，未标记水作为反应物生长ZnO和TiO ₂的第一个结果，从而建立了化学计量ZnO和TiO的生长条件₂在硅上。膜的绝对组成和厚度由RBS和NRA确定，取决于蒸汽脉冲持续时间，ALD循环次数和基材温度。物理厚度通过椭圆偏振法确定。还介绍了使用高度富集¹⁸ O的水生长ZnO的最初结果。