Total electron yield (TEY) imaging is an established scanning transmission X-ray microscopy (STXM) technique that gives varying contrast based on a sample's geometry, elemental composition, and electrical conductivity. However, the TEY-STXM signal is determined solely by the electrons that the beam ejects from the sample. A related technique, X-ray beam-induced current (XBIC) imaging, is sensitive to electrons and holes independently, but requires electric fields in the sample. Here we report that multi-electrode devices can be wired to produce differential electron yield (DEY) contrast, which is also independently sensitive to electrons and holes, but does not require an electric field. Depending on whether the region illuminated by the focused STXM beam is better connected to one electrode or another, the DEY-STXM contrast changes sign. DEY-STXM images thus provide a vivid map of a device's connectivity landscape, which can be key to understanding device function and failure. To demonstrate an application in the area of failure analysis, we image a 100 nm, lithographically-defined aluminum nanowire that has failed after being stressed with a large current density.

中文翻译：

---

使用 STXM 进行差分电子产额成像

总电子产额 (TEY) 成像是一种成熟的扫描透射 X 射线显微镜 (STXM) 技术，可根据样品的几何形状、元素组成和电导率提供不同的对比度。然而，TEY-STXM 信号仅由光束从样品中射出的电子决定。一种相关的技术，X 射线束感应电流 (XBIC) 成像，对电子和空穴独立敏感，但需要样品中的电场。在这里，我们报告说，多电极设备可以连接以产生微分电子产率 (DEY) 对比度，它也对电子和空穴独立敏感，但不需要电场。根据聚焦 STXM 光束照射的区域是否更好地连接到一个电极或另一个电极，DEY-STXM 对比度会改变符号。因此，DEY-STXM 图像提供了设备连接环境的生动地图，这可能是了解设备功能和故障的关键。为了演示在故障分析领域的应用，我们对 100 nm、光刻定义的铝纳米线进行了成像，该铝纳米线在受到大电流密度应力后发生故障。