A novel selective atomic layer deposition (ALD) process for depositing MoS₂ using MoCl₅ and H₂S precursors is proposed. On the surface of SiO₂, the prolonged introduction of MoCl₅ vapor by increasing the MoCl₅ pulsing time rapidly suppresses the subsequent MoS₂ growth due to the intense self‐etching effect of MoCl₅, that is, the detachment of weakly bonded surface adsorbates (MoCl_x*). In contrast, the surface of Al allows more facile adsorption of MoCl₅ than in the case of the SiO₂ surface, and thus effectively compensates for the reduced deposition rate. By optimizing the MoCl₅ pulsing time, the self‐aligned growth of MoS₂ on predefined Al (5 nm) patterns (circular and letter patterns) on a SiO₂ substrate with a negligible selectivity loss is demonstrated.

中文翻译：

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利用MoCl5的同时沉积和蚀刻特性沉积MoS2的区域选择性原子层沉积

提出了一种使用MoCl ₅和H ₂ S前驱体沉积MoS ₂的新型选择性原子层沉积（ALD）工艺。在SiO的表面₂中，延长引入代替MoCl的₅蒸气通过增加代替MoCl ₅脉冲时间迅速抑制后续的MoS ₂生长，由于代替MoCl的强烈自蚀刻效应₅，即，弱结合表面吸附物的脱离（MoCl _x *）。相比之下，与SiO ₂相比，Al的表面更容易吸附MoCl ₅表面，因此有效地补偿了降低的沉积速率。通过优化MoCl ₅脉冲时间，证明了MoS ₂在SiO ₂衬底上的预定Al（5 nm）图案（圆形和字母图案）上的自对准生长，选择性损失可忽略不计。