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Impurity states in a GaN/AlxGa1−xN spherical quantum dot under an applied electric field
Journal of Nanophotonics ( IF 1.5 ) Pub Date : 2021-12-28 , DOI: 10.1117/1.jnp.14.046017
Min Hu 1 , Hailong Wang 1 , Qian Gong 2
Affiliation  

Abstract. In the framework of effective mass envelope function approximation, the impurity states in GaN / AlxGa1 − xN spherical quantum dot (QD) are calculated by plane-wave expansion method. The binding energies of the impurity in 1s and 2p± states and the transition energy between 1s state and 2p± state are calculated and analyzed in detail. Several critical influencing factors of impurity states, including geometry, impurity position, material composition, and applied electric field, are considered in the calculation. The effects of QD radius, the impurity position, and the electric field strength on binding energies of 1s state and 2p± state are different. However, the effect of Al component on binding energies of 1s state and 2p± state is consistent. The transition energy is strongly dependent on the QD radius, impurity position, Al composition, and electric field strength. The change trend of transition energy is similar to that of binding energy in 1s state.

中文翻译:

外加电场下 GaN/AlxGa1−xN 球形量子点中的杂质态

摘要。在有效质量包络函数近似的框架内,GaN/AlxGa1-xN球形量子点(QD)中的杂质态通过平面波展开法计算。详细计算和分析了1s和2p±态杂质的结合能和1s态和2p±态之间的跃迁能。计算中考虑了杂质状态的几个关键影响因素,包括几何形状、杂质位置、材料成分和外加电场。QD半径、杂质位置和电场强度对1s态和2p±态结合能的影响是不同的。然而,Al组分对1s态和2p±态结合能的影响是一致的。跃迁能量强烈依赖于 QD 半径、杂质位置、铝成分和电场强度。跃迁能的变化趋势与1s态结合能的变化趋势相似。
更新日期:2021-12-28
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