The ion implantation of H⁺ and D⁺ into Ga₂O₃ produces several O–H and O–D centers that have been investigated by vibrational spectroscopy. These defects include the dominant V_Ga(1)-2H and V_Ga(1)-2D centers studied previously along with additional defects that can be converted into this structure by thermal annealing. The polarization dependence of the spectra has also been analyzed to determine the directions of the transition moments of the defects and to provide information about defect structure. Our experimental results show that the implantation of H⁺ (or D⁺) into Ga₂O₃ produces two classes of defects with different polarization properties. Theory finds that these O–H (or O–D) centers are based on two shifted configurations of a Ga(1) vacancy that trap H (or D) atom(s). The interaction of V_Ga(1)-nD centers with other defects in the implanted samples has also been investigated to help explain the number of O–D lines seen and their reactions upon annealing. Hydrogenated divacancy V_Ga(1)-V_O centers have been considered as an example.

H ⁺和 D ⁺离子注入Ga ₂ O ₃会产生几个 O-H 和 O-D 中心，这些中心已经通过振动光谱学进行了研究。这些缺陷包括先前研究的主要 V _Ga(1) -2H 和 V _Ga(1) -2D 中心以及可以通过热退火转化为这种结构的其他缺陷。还分析了光谱的偏振相关性以确定缺陷过渡矩的方向并提供有关缺陷结构的信息。我们的实验结果表明，将 H ⁺（或 D ⁺）注入 Ga ₂ O ₃产生两类具有不同偏振特性的缺陷。理论发现这些 O-H（或 O-D）中心基于捕获 H（或 D）原子的 Ga(1) 空位的两个移位配置。还研究了 V _Ga(1) -nD 中心与注入样品中其他缺陷的相互作用，以帮助解释所见 O-D 线的数量及其在退火时的反应。氢化双空位 V _Ga(1) -V _O中心被认为是一个例子。