Abstract—

The composition, the surface morphology, and the crystalline and electronic structure of МоО₃ nanofilms are studied using a set of methods, namely, scanning electron spectroscopy and high energy electron diffraction, photoelectron spectroscopy, and secondary electron emission. These nanofilms are obtained by implanting \({\text{O}}_{{\text{2}}}^{{\text{ + }}}\) ions into a Mo single crystal heated to Т = 850 K. Films with different thicknesses (~30, 60, and 90 Å) are obtained at an ion energy of 1–5 keV and a dose of D = (4–8) × 10¹⁷ cm^–2. It is shown that a continuous and homogeneous polycrystalline МоО₃ film with a surface roughness of at most 1.5 nm is formed. The band gaps of these films are ~3.4 eV, and the widths of the conduction bands are 4.5 eV. It is discovered that there are four maxima of the density of electronic states in the valence band; probably, they are due to hybridization of the N₅, N₄₅, N₄ energy levels of Mo with the L₂, L₂₃, and L₃ energy levels of oxygen.

中文翻译：

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МоO3 /Мо纳米膜的电子结构的制备和研究

摘要—

组合物中，表面形态，和МоО的晶体和电子结构₃纳米膜是使用一组的方法，即，在扫描电子能谱和高能电子衍射，光电子能谱和二次电子发射研究。这些纳米膜是通过将\（{\ text {O}} _ {{\ text {2}}} ^ {{\ text {+}}} \）离子注入加热到Т = 850 K的Mo单晶中获得的。以1–5 keV的离子能量和D =（4–8）×10 ¹⁷ cm ^–2的剂量获得具有不同厚度（〜30、60和90Å）的^薄膜。结果表明，连续的和均匀的多晶МоО ₃形成具有至多1.5nm的表面粗糙度的膜。这些薄膜的带隙约为3.4 eV，导带的宽度为4.5 eV。发现在价带中有四个电子态密度的最大值。可能是由于Mo的N ₅，N ₄₅，N ₄能级与氧的L ₂，L ₂₃和L ₃能级杂交所致。