The processes of the plasma sputtering of epitaxial lead-tin selenide films near the sputtering threshold are studied. Pb_1 – xSn_xSe films (x = 0.03, 0.07) with a thickness of 0.5–2 microns are grown by molecular-beam epitaxy on CaF₂/Si(111) substrates. The films are plasma treated with radio-frequency high-density low-pressure inductively coupled argon plasma with an ion energy of 20–25 eV at typical process times of 60–360 s. As a result of plasma treatment for a prolonged period, the formation of hollow metal particles of nano- and submicron sizes is observed on the surface. Using scanning electron microscopy methods, it is shown that the lateral dimensions of the obtained structures, their shape and surface density vary over wide ranges and significantly depend on the time of plasma sputtering. The features of plasma sputtering for the studied films and films of a binary compound of lead selenide are compared.

研究了接近溅射阈值的外延铅锡硒化物薄膜的等离子体溅射工艺。通过分子束外延在CaF ₂上生长厚度为0.5–2微米的Pb _{1  – x} Sn _x Se薄膜（x = 0.03，0.07）/ Si（111）衬底。薄膜经过射频高密度低压感应耦合氩等离子体处理，离子处理时间为60–360 s，离子能量为20–25 eV。长时间进行等离子体处理的结果是，在表面上观察到了纳米和亚微米尺寸的中空金属颗粒的形成。使用扫描电子显微镜方法，表明所获得的结构的横向尺寸，它们的形状和表面密度在宽范围内变化，并且极大地取决于等离子体溅射的时间。比较了所研究薄膜和硒化铅二元化合物薄膜的等离子溅射特性。