The results of studying the influence of a constant magnetic field on the dynamic behavior of dislocations in the crystal block of an interferometer, which is in a magnetic field and subsequently subjected to uniaxial mechanical tensile stress along the crystal axis [1\(\bar {1}\)0], are presented. It is experimentally proved that in silicon crystals that have undergone preliminary magnetic treatment, a hardening effect is observed. The magnetic memory that appears in silicon samples with dislocations after exposure to a magnetic field is shown to be short term.

中文翻译：

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X射线干涉测量法研究恒定磁场对硅晶体中位错动力学行为的影响

研究恒定磁场对干涉仪晶体块中位错动态行为的影响的结果，该晶体处于磁场中，并且随后沿晶轴[1 \（\ bar { 1} \） 0]。实验证明，在经过初步磁性处理的硅晶体中，观察到硬化效果。暴露在磁场中后出现在位错的硅样品中的磁存储器显示为短期的。