In order to develop infinite capacitive materials with high dielectric constant and low dielectric loss, influences of Y/Mn co-doping and ZrO2 coating on the dielectric properties of barium strontium tinanate/polyvinylidene fluoride (BST/PVDF) composite films were systematically investigated with fixing Y concentration as 0.3 at.% and varying Mn concentration from 1 at.% to 4 at.%. The experimental results show that the dielectric constant of BST@ZrO2/PVDF composite increases by 50% relative to BST/PVDF and the dielectric loss is evidently depressed. In comparison with BST@ZrO2/PVDF sample, furthermore, the dielectric constant of Y/Mn co-doped BST@ZrO2/PVDF samples increases by about 60% and the dielectric loss further reduces at 1 kHz. The promoted dielectric performances of composite originate from the space charge separation formed by Y/Mn co-doping and the limitation of electronic mobility by coated ZrO2. Y/Mn co-doped BST@ZrO2/PVDF composite film with 3% Mn has a dielectric constant of 37.9, a dielectric loss of 0.0117, superior dielectric temperature stability (3.1% from −5[Formula: see text]C to 45[Formula: see text]C at 1 kHz), and a discharged energy density of 5.67 J/cm3 at 600 kV/cm. The simultaneous optimization of dielectric constant and dielectric loss of BST/PVDF composite is realized in this experiment. The superior dielectric temperature stability suggests the application potential of Y/Mn co-doped BST@ZrO2/PVDF as wearable capacitors.

中文翻译：

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用于可穿戴电容器应用的 Y/Mn 共掺杂 BST@ZrO2/PVDF 复合薄膜的高介电常数和低介电损耗

为了开发具有高介电常数和低介电损耗的无限电容材料，Y/Mn 共掺杂和 ZrO 的影响2系统研究了钛酸锶钡/聚偏氟乙烯（BST/PVDF）复合薄膜介电性能的涂层，其中Y浓度固定为0.3 at.%，Mn浓度在1 at.%至4 at.%之间变化。实验结果表明，BST@ZrO的介电常数2/PVDF复合材料相对于BST/PVDF增加了50%，介电损耗明显降低。与 BST@ZrO 相比2/PVDF 样品，此外，Y/Mn 共掺杂 BST@ZrO 的介电常数2/PVDF 样品增加约 60%，介电损耗在 1 kHz 时进一步降低。复合材料介电性能的提升源于 Y/Mn 共掺杂形成的空间电荷分离和涂层 ZrO 对电子迁移率的限制2. Y/Mn共掺杂BST@ZrO2/PVDF 复合膜含 3% Mn，介电常数为 37.9，介电损耗为 0.0117，介电温度稳定性优异（3.1% 从 -5[公式：见正文]C 到 45[公式：见正文]C at 1 kHz )，放电能量密度为 5.67 J/cm3在 600 千伏/厘米。本实验实现了BST/PVDF复合材料介电常数和介电损耗的同时优化。优异的介电温度稳定性表明 Y/Mn 共掺杂 BST@ZrO 的应用潜力2/PVDF 作为可穿戴电容器。