The cesium hydrogeno–arsenate tellurate material (CsAsTe) was grown at room temperature by slow evaporation of aqueous solution, in order to determine the nature of all phases transitions as well as to specify the dielectric properties and electrical conduction mechanisms.

The DTA, TG and the mass spectrometry analyses revealed that no mass loss was recorded before 425 K.

The DSC thermogram demonstrates the presence of three phase transitions at 365 K, 379 K and 400 K. Raman spectra were performed at various temperatures so as to characterize the phase transitions.

The dielectric and electrical properties were specified. In this process, the Nyquist plots (–Z″ versus Zʹ) were well fitted to an equivalent circuit built up by a series combination of grain and grain boundary elements.

Furthermore, the DC conductivity evolution unveils the presence of the ionic–protonic conduction phase transition.

The AC electrical investigation discloses that the conduction is insured by the correlated barrier hopping (CBH) model. The variation of M″ versus frequency proves that the conduction mechanism is thermally activated.

氢砷酸铯碲化铯材料（CsAsTe）在室温下通过缓慢蒸发水溶液生长，以便确定所有相变的性质以及指定介电性质和导电机理。

DTA，TG和质谱分析表明，在425 K之前没有记录到质量损失。

DSC热谱图证明在365 K，379 K和400 K处存在三个相变。在各种温度下进行拉曼光谱分析以表征相变。

规定了介电和电性能。在此过程中，奈奎斯特图（–Z”对Zʹ）很好地拟合了由晶粒和晶粒边界元素的一系列组合建立的等效电路。

此外，直流电导率的演变揭示了离子-质子传导相变的存在。

交流电研究表明，通过相关势垒跳跃（CBH）模型可以确保传导。M”相对于频率的变化证明了传导机制是热激活的。