With the recent surge of emerging memory technologies, the demand for storage capacities in various applications is more than ever. Oxide material based memory elements are promising candidates for designing future non-volatile storage architectures. In this work, we investigated the structural, transport and resistive switching (RS) behaviour of a novel hybrid structure made of calcium doped LaMnO₃ (LCMO) and reduced graphene oxide (rGO). Very stable and robust bipolar RS behaviour was observed with additional tunability obtained through the variation in the rGO concentration in the structure. The presence of a metal to insulator transition is clearly observed with a lowering of the transition temperature on increase in the rGO content. Both the effects can be attributed to the oxygen vacancy generation and filament formation as confirmed from the X-ray photoelectron spectroscopy (XPS) and high resolution transmission electron microscopy (HRTEM) measurements. The combined attributes of easy fabrication route, robust switching behaviour and environmental stability of the present system makes it a superior candidate for future non-volatile memory design and oxide electronics.

随着近来新兴内存技术的兴起，对各种应用程序中存储容量的需求比以往任何时候都大。基于氧化物材料的存储元件是设计未来的非易失性存储体系结构的有希望的候选者。在这项工作中，我们研究了由钙掺杂的LaMnO ₃制成的新型杂化结构的结构，传输和电阻转换（RS）行为。（LCMO）和氧化石墨烯（rGO）。观察到非常稳定和鲁棒的双极RS行为，并通过结构中rGO浓度的变化获得了额外的可调性。随着rGO含量的增加，转变温度降低，可以清楚地观察到金属向绝缘体转变的存在。X射线光电子能谱（XPS）和高分辨率透射电子显微镜（HRTEM）测量证实，这两种作用都可归因于氧空位的产生和细丝的形成。本系统的容易制造路线，鲁棒的切换行为和环境稳定性的组合属性使其成为未来的非易失性存储器设计和氧化物电子学的极好的候选者。