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High-Reliability Wireless Packaging for High-Temperature SiC Power Device Sintered by Novel Organic-Free Nanomaterial
IEEE Transactions on Components, Packaging and Manufacturing Technology ( IF 2.2 ) Pub Date : 2020-11-17 , DOI: 10.1109/tcpmt.2020.3038430
Hui Ren , Guisheng Zou , Zhenyu Zhao , Mengya Wan , Hongqiang Zhang , Qiang Jia , Lei Liu

This article presents a wireless packaging design for SiC power device, which displays low induction, good thermal management performance, and excellent high-temperature reliability. A novel organic-free nanomaterial fabricated by ultrafast pulsed laser deposition (PLD) is employed as the bonding material for both die attach and die top. With $t_{\text {on}} =20$ s and $\Delta T_{J} =200$ K, longtime power cycling tests were performed to evaluate the high-temperature reliability of the packaging, and 11 500 cycles were achieved before failure. The Cu ribbon bonded by the nanomaterial eliminated hot spot on the die top and facilitated heat dissipation, which improved thermal management performance of this packaging. Failure analysis and simulation indicate that thermal stress in the interconnection layer is considered as the primary failure mode under high-temperature operation.

中文翻译:

新型无有机纳米材料烧结的高温SiC功率器件的高可靠性无线封装

本文提出了一种用于SiC功率器件的无线封装设计,该设计具有低电感,良好的热管理性能和出色的高温可靠性。通过超快脉冲激光沉积(PLD)制造的新型无有机纳米材料被用作芯片附着和芯片顶部的结合材料。用 $ t _ {\ text {on}} = 20 $ $ \ Delta T_ {J} = 200 $ K,进行了长时间的电源循环测试以评估包装的高温可靠性,并在失效前完成了11 500次循环。通过纳米材料粘合的铜带消除了芯片顶部的热点,并促进了散热,从而改善了该封装的热管理性能。失效分析和仿真表明,互连层中的热应力被认为是高温操作下的主要失效模式。
更新日期:2020-12-25
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