A record high electron mobility of 698 cm ² / $\text{V}\cdot \text{s}$ in a tensile-strained Ge _0.96 Sn _0.04 nMOSFET is demonstrated in this letter. High-quality GeSn films were epitaxially grown by low-temperature chemical vapor deposition. Different strain conditions in the active GeSn layers were achieved by Ge or GeSn relaxed buffers. A mesa FET structure was used to effectively reduce the OFF leakage by a recessed p/n junction in Ge. The I _ON /I _OFF ratio in the mesa GeSn FETs is boosted by a factor of 100 compared to conventional planar devices. As the GeSn film becomes more tensile strained, the channel mobility is enhanced, which could be attributed to a higher carrier population in the ${\Gamma }$ valley.

中文翻译：

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拉伸应变增强GeSn n沟道MOSFET中的电子迁移率

创纪录的高电子迁移率698 cm ² / $ \ text {V} \ cdot \ text {s} $ 在这封信中证明了在拉伸应变的Ge _0.96 Sn _0.04 nMOSFET中的应力 。通过低温化学气相沉积外延生长高质量的GeSn膜。通过Ge或GeSn弛豫缓冲液可实现有源GeSn层中的不同应变条件。台面FET结构用于通过Ge中的凹陷p / n结有效减少OFF泄漏。与传统的平面器件相比，台面GeSn FET中的I _ON / I _OFF比提高了100倍。随着GeSn薄膜的拉伸应变增加，沟道迁移率提高，这可能归因于硅中较高的载流子数量。 $ {\ Gamma} $ 谷。