A gallium nitride (GaN) ring oscillator based on high-performance one-chip complementary logic (CL) inverters is demonstrated on a conventional ${p}$ -GaN gate power HEMT (high-electron-mobility transistor) platform. It manifests the feasibility of the multiple-stage monolithic integration of GaN CL gates, the most energy-efficient digital circuit configuration, and consequently the potential of deploying CL circuits in the all-GaN power integration as peripheral circuits with higher energy efficiency. Thanks to the successful monolithic integration of enhancement-mode ${p}$ -channel and ${n}$ -channel field-effect transistors, the integrated CL inverters in this work present remarkable performances, including stringent rail-to-rail operations, substantially suppressed static power dissipation at both logic ‘low’ and ‘high’ states, suitable transition threshold voltages of ~2.0 V (40% of the common 5-V supply) and wide noise margins above 1.8 V (36% of 5 V).

中文翻译：

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基于高性能互补逻辑反相器的单片集成GaN环形振荡器

在常规技术上演示了基于高性能单芯片互补逻辑（CL）反相器的氮化镓（GaN）环形振荡器 $ {p} $ -GaN栅极功率HEMT（高电子迁移率晶体管）平台。它表明了GaN CL栅极的多级单片集成的可行性，最节能的数字电路配置，因此证明了将CL电路作为具有更高能效的外围电路部署在全GaN电源集成中的潜力。得益于增强模式的成功整体集成 $ {p} $ -频道和 $ {n} $ 通道场效应晶体管，集成式CL逆变器在这项工作中表现出非凡的性能，包括严格的轨到轨操作，在逻辑“低”和“高”状态下均显着抑制了静态功耗，合适的跃迁阈值电压为〜 2.0 V（占普通5 V电源的40％）和超过1.8 V（5 V的36％）的宽噪声容限。